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| www.irf.com 1 hexfet ? power mosfet automotive grade features advanced planar technology p-channel mosfet low on-resistance 150c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applica- tions, this cellular design of hexfet? power mosfets utilizes the latest processing tech- niques to achieve low on-resistance per silicon area. this benefit combined with the fast switch- ing speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ g d s gate drain source parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, vgs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? ??? 0.75 c/w r ? ??? 40 300 10 lbf in (1.1n m) 170 1.3 20 790 140 see fig. 12a, 12b, 15, 16 -55 to + 150 max. -70 -44 -280 -42 to-262 AUIRF4905L g d s d d 2 pak auirf4905s s d g d v (br)dss -55v r ds(on) max. 20m ? i d (silicon limited) -70a i d (package limited) -42a s d g 2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.16mh r g = 25 ? , i as = -42a, v gs =-10v. part not recommended for use above this value. pulse width ? 1.0ms; duty cycle ? 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. ? s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -55 ??? ??? v ? ? ? a ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 120 180 q gs gate-to-source charge ??? 32 ??? nc q gd gate-to-drain ("miller") charge ??? 53 ??? t d(on) turn-on delay time ??? 20 ??? t r rise time ??? 99 ??? ns t d(off) turn-off delay time ??? 51 ??? t f fall time ??? 64 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 3500 ??? c oss output capacitance ??? 1250 ??? c rss reverse transfer capacitance ??? 450 ??? pf c oss output capacitance ??? 4620 ??? c oss output capacitance ??? 940 ??? c oss eff. effective output capacitance ??? 1530 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -42 (body diode) a i sm pulsed source current ??? ??? -280 (body diode) v sd diode forward voltage ??? ??? -1.3 v t rr reverse recovery time ??? 61 92 ns q rr reverse recovery charge ??? 150 220 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 0v, v ds = -1.0v, ? = 1.0mhz v gs = 0v, v ds = -44v, ? = 1.0mhz v gs = 0v, v ds = 0v to -44v t j = 25c, i s = -42a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i f = -42a, v dd = -28v di/dt = 100a/ s conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d =-42a v ds = v gs , i d = -250 a v ds = -55v, v gs = 0v v ds = -44v, v gs = 0v, t j = 125c mosfet symbol v ds = -44v conditions v gs = -10v v gs = 0v v ds = -25v ? = 1.0mhz v gs = -10v v dd = -28v i d = -42a r g = 2.6 ? i d = -42a v gs = -20v v gs = 20v conditions www.irf.com 3 qualification information ? to-262 n/a d 2 pak msl1 rohs complia nt yes esd machine model class m4 (+/- 425v) ?? aec-q101-002 human body model class h2 (+/- 4000v) ?? aec-q101-001 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ?? aec-q101-005 moisture sensitivity level 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60 s pulse width tj = 25c -4.5v vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60 s pulse width tj = 150c -4.5v vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 3 4 5 6 7 8 9 10 11 12 13 14 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) v ds = -25v ? 60 s pulse width t j = 25c t j = 150c 0 20406080 -i d, drain-to-source current (a) 0 10 20 30 40 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 150c v ds = -10v 380 s pulse width www.irf.com 5 nce fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 200 q g total gate charge (nc) 0 4 8 12 16 20 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -44v vds= -28v vds= -11v i d = -42a 0.0 0.4 0.8 1.2 1.6 2.0 -v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 -v ds , drain-tosource voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc limited by package 6 www.irf.com 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature ri (c/w) ?? i (sec) 0.1165 0.000068 0.3734 0.002347 0.2608 0.014811 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci i ? ri ci= ? i ? ri 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 - i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -42a v gs = -10v www.irf.com 7 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 14. threshold voltage vs. temperature 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -17a -30a bottom -42a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 2.4 2.8 3.2 3.6 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250 a d.u.t. v ds i d i g -3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge !" t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = -42a www.irf.com 9 fig 17. #$% & ' ( for p-channel hexfet power mosfets ???? ? ???? ?? ?? p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ) ! " # " ! ) + - + + + - - - ??? ! ??? " #$## ??? % & & ??? #$##' $ )) fig 18a. switching time test circuit fig 18b. switching time waveforms v ds 90% 10% v gs t d(on) t r t d(off) t f ( ) ???? * % ??????? #$%$$ + - )) " & #$%$ &'( )) 10 www.irf.com # * + + ( % ( ,-, ..-. $.$ /-/ 0+1 www.irf.com 11 to-262 package outline dimensions are shown in millimeters (inches) to-262 part marking information % ( ,-, ..-. $.$ /-/ 0+1 # * + + ( note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 12 www.irf.com !" # dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. www.irf.com 13 ordering information base part number package type standard pack complete part number form quantity AUIRF4905L to-262 tube 50 AUIRF4905L auirf4905s d2pak tube 50 auirf4905s tape and reel left 800 auirf4905strl tape and reel right 800 auirf4905strr 14 www.irf.com ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! . ! ! ) ! & ! ! - ) ! / 0 - 0 . & ) - ! 1 2 $ 2$ / 2$ ( ! 0 2$ . ( 0 * ( ! /1'+/ 34565 ( #$%! 0 . ( ! 1 0 ' / ( 2 *$+ " ,"$-. + )- ) / 0123 '4 |
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